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IEC 60749-23 Ed. 1.1 b:2011
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IEC 60749-23 Ed. 1.1 b:2011 Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life CONSOLIDATED EDITION
standard by International Electrotechnical Commission, 03/30/2011
Full Description
IEC 60749-23:2004+A1:2011 is used to determine the effects of bias conditions and temperature on solid state devices over time. It simulates the device operating condition in an accelerated way, and is primarily used for device qualification and reliability monitoring. A form of high temperature bias life using a short duration, popularly known as "burn-in", may be used to screen for infant mortality related failures. The detailed use and application of burn-in is outside the scope of this standard. This consolidated version consists of the first edition (2004) and its amendment 1 (2011). Therefore, no need to order amendment in addition to this publication.
M00007507
2021-02-22
New product
IEC 60749-23 Ed. 1.1 b:2011 Semiconductor devices - Mechanical and climatic test methods - Part 23: High temperature operating life CONSOLIDATED EDITION
standard by International Electrotechnical Commission, 03/30/2011