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IEC 62373-1 Ed. 1.0 b:2020
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IEC 62373-1 Ed. 1.0 b:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
standard by International Electrotechnical Commission, 07/15/2020
Full Description
IEC 62373-1:2020 provides the measurement procedure for a fast BTI (bias temperature instability) test of silicon based metal-oxide semiconductor field-effect transistors (MOSFETs).This document also defines the terms pertaining to the conventional BTI test method.
M00007254
2021-02-22
New product
IEC 62373-1 Ed. 1.0 b:2020 Semiconductor devices - Bias-temperature stability test for metal-oxide, semiconductor, field-effect transistors (MOSFET) - Part 1: Fast BTI test for MOSFET
standard by International Electrotechnical Commission, 07/15/2020