Full Description

1.1Low energy components in the photon energy spectrum of Co-60 irradiators lead to absorbed dose enhancement effects in the radiation-hardness testing of silicon electronic devices. These low energy components may lead to errors in determining the absorbed dose in a specific device under test. This method covers procedures for the use of a specialized ionization chamber to determine a figure of merit for the relative importance of such effects. It also gives the design and instructions for assembling this chamber.

1.2This method is applicable to measurements in Co-60 radiation fields where the range of exposure rates is 710 ⁶ to 310² C kg ¹ s¹ (approximately 100 R/h to 100 R/s). For guidance in applying this method to radiation fields where the exposure rate is 100 R/s, see Appendix X1.

Note 1:See Terminology E170 for definition of exposure and its units.

1.3The values stated in SI units are to be regarded as the standard. The values given in parentheses are for information only.

1.4This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to establish appropriate safety, health, and environmental practices and determine the applicability of regulatory limitations prior to use.

1.5This international standard was developed in accordance with internationally recognized principles on standardization established in the Decision on Principles for the Development of International Standards, Guides and Recommendations issued by the World Trade Organization Technical Barriers to Trade (TBT) Committee.